SUD50P04-13L-GE3
Снят с производства
Увеличить
Краткое описание:
P-CH MOSFET, 40V, 60A, 13mR, DPAK, Surface Mount
Дополнительная информация
P-channel MOSFET featuring a 40V drain-source breakdown voltage and 60A continuous drain current. Offers a low 13mΩ drain-source on-resistance and 93.7W maximum power dissipation. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 47ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 47ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 13mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 3.12nF |
| Power Dissipation | 93.7W |
| Threshold Voltage | -3V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 93.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 13MR |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
