SUM110N03-04P-E3
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N-Channel Power MOSFET, 110A, 30V, 4.2mR, TO-263
Дополнительная информация
N-Channel Power MOSFET, TO-263-3 package, featuring 30V drain-source breakdown voltage and 110A continuous drain current. Offers low 4.2mΩ Rds On resistance for efficient power handling. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 120W. Surface mountable with fast switching characteristics, including 12ns turn-on and 10ns fall times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 5.1nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 120W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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