SUM110N04-03-E3
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Краткое описание:
N-Channel MOSFET 110A 40V 2.8mR TO-263 Power
Дополнительная информация
N-Channel Power MOSFET, TO-263-3 package, featuring 40V drain-source voltage and 110A continuous drain current. Offers a low 2.8mΩ drain-source resistance at a nominal 4V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 375W and an operating temperature range of -55°C to 175°C. RoHS compliant with fast switching characteristics including 25ns turn-on delay and 55ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 8.25nF |
| Power Dissipation | 437.5W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 40V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 375W |
| Reverse Recovery Time | 60ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 40V |
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