SUM110N04-05H-E3
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Краткое описание:
N-Channel MOSFET | 40V | 110A | 5.3mR | TO-263 | Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 110A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 5.3mΩ drain-source resistance. Designed for surface mounting in a TO-263-3 package, it boasts a maximum power dissipation of 150W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 12ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.38inch |
| Height | 0.19inch |
| Length | 0.41inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.3mR |
| Package/Case | TO-263-3 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 6.7nF |
| Power Dissipation | 150W |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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