SUM110N04-2M3L-E3
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Краткое описание:
40V 110A N-CH MOSFET, 2.3mR Rds On, D2PAK
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 110A continuous drain current. Surface mount TO-263-3 package offers low 2.3mΩ drain-source resistance. Designed for efficient switching with fast turn-on (25ns) and turn-off (125ns) delay times, and a 200ns fall time. Operates across a wide temperature range from -55°C to 175°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 200ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 13.6nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 40V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.75W |
| Reverse Recovery Time | 56ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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