SUM110N05-06L-E3
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N-Channel Power MOSFET, 55V, 110A, 6mR, TO-263
Дополнительная информация
N-channel power MOSFET featuring 55V drain-source breakdown voltage and 110A continuous drain current. Offers a low 6mΩ drain-source on-resistance at a nominal 3V gate-source voltage. Designed for high-efficiency power applications with a maximum power dissipation of 36W and an operating temperature range of -55°C to 175°C. This RoHS compliant component is available in a TO-263AB package, suitable for both through-hole and surface mount applications.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 0.38inch |
| Height | 0.19inch |
| Length | 0.41inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 3.3nF |
| Power Dissipation | 3.7W |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 55V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 36W |
| Reverse Recovery Time | 70ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 6mR |
| Drain to Source Breakdown Voltage | 55V |
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