SUM110N06-3M4L-E3
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Краткое описание:
N-CH MOSFET 60V 110A 3.4mR D2PAK
Дополнительная информация
N-channel MOSFET with 60V drain-source voltage and 110A continuous drain current. Features 3.4mR drain-source on-resistance and 375W max power dissipation. Packaged in a TO-263-3 surface-mount D2PAK case, this component offers fast switching with turn-on delay of 22ns and fall time of 280ns. Operating temperature range is -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 280ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.4mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 12.9nF |
| Power Dissipation | 3.7W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 375W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3.4mR |
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