SUM110P08-11L-E3
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Краткое описание:
P-Channel Power MOSFET, 80V, 23.5A, 11.2mR, TO-263
Дополнительная информация
P-channel Power MOSFET with 80V drain-source voltage and 23.5A continuous drain current. Features low 11.2mΩ drain-source on-resistance and 375W maximum power dissipation. Surface mountable in a TO-263-3 package, this RoHS compliant component offers fast switching with turn-on delay of 20ns and fall time of 550ns. Operating temperature range from -50°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 550ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11.2mR |
| Nominal Vgs | -3V |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 10.85nF |
| Power Dissipation | 13.6W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 135ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 375W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 11.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23.5A |
| Drain to Source Voltage (Vdss) | -80V |
| Drain-source On Resistance-Max | 11.1mR |
