SUM18N25-165-E3

Снят с производства
SUM18N25-165-E3 - Vishay(Siliconix)
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Краткое описание: 250V 18A 165mR N-CH MOSFET D2PAK Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 250V drain-source voltage and 18A continuous drain current. Surface mountable in a TO-263-3 (D2PAK) package, this component offers a low 165mR drain-source on-resistance. It operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 150W. Key switching characteristics include a 15ns turn-on delay and 30ns turn-off delay.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 100ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 165mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 1.95nF
Power Dissipation 3.75W
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Max Power Dissipation 150W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 165mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 250V
Drain-source On Resistance-Max 165MR

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