SUM23N15-73-E3
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Краткое описание:
MOSFET N-CH 150V 23A 73mR TO-263
Дополнительная информация
N-channel Power MOSFET, 150V drain-source breakdown voltage, 23A continuous drain current, and 73mΩ maximum drain-source on-resistance. Features a 4V nominal gate-source threshold voltage and operates within a -55°C to 175°C temperature range. Surface mountable in a TO-263 package, this component offers a 3.75W maximum power dissipation and is RoHS compliant. Includes fast switching characteristics with 10ns turn-on delay and 30ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 73mR |
| Nominal Vgs | 4V |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 1.29nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 73mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 73mR |
| Drain to Source Breakdown Voltage | 150V |
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