SUM33N20-60P-E3
Снят с производства
Увеличить
Краткое описание:
200V 33A N-CH MOSFET D2PAK 59mR
Дополнительная информация
N-channel MOSFET with 200V Drain-Source Voltage (Vdss) and 33A Continuous Drain Current (ID). Features low 59mR Drain-Source Resistance (Rds On Max) and operates with a 4.5V Nominal Gate-Source Voltage (Vgs). Surface mount TO-263-3 package with 175°C max operating temperature. Includes fast switching characteristics with 9ns Fall Time and 16ns Turn-On Delay Time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Packaging | Tape and Reel |
| Rds On Max | 59mR |
| Nominal Vgs | 4.5V |
| Termination | SMD/SMT |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 2.735nF |
| Threshold Voltage | 4.5V |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.12W |
| Reverse Recovery Time | 114ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 59mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
