SUM40N15-38-E3

Снят с производства
SUM40N15-38-E3 - Vishay(Siliconix)
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Краткое описание: N-Channel MOSFET, 150V, 40A, 38mR, TO-263
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET with 150V drain-source voltage and 40A continuous drain current. Features 38mΩ maximum drain-source on-resistance and 3.75W maximum power dissipation. Operates from -55°C to 175°C, with a nominal gate-source voltage of 4V and a maximum of 20V. This surface-mount component, packaged in TO-263AB, offers fast switching with turn-on delay of 15ns and fall time of 90ns. RoHS compliant and suitable for general-purpose power applications.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.41mm
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 90ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 38mR
Nominal Vgs 4V
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 2.5nF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant Unknown
Max Power Dissipation 3.75W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 38mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 150V
Drain-source On Resistance-Max 38mR

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