SUM75N06-09L-E3
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N-Channel Power MOSFET, 60V, 90A, 9.3mR, TO-263
Дополнительная информация
N-channel power MOSFET, TO-263 package, featuring 60V drain-source breakdown voltage and 90A continuous drain current. Offers a low 9.3mΩ maximum drain-source on-resistance. Designed for surface mounting with a 3-pin configuration, this RoHS compliant component operates from -55°C to 175°C. Key switching characteristics include a 7ns turn-on delay and 12ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.3mR |
| Nominal Vgs | 2V |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 9.3mR |
| Drain to Source Breakdown Voltage | 60V |
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