SUM75N15-18P-E3
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N-Channel Power MOSFET, 150V, 75A, 18mR, TO-263
Дополнительная информация
N-channel power MOSFET featuring 150V drain-source breakdown voltage and 75A continuous drain current. Offers a low 18mΩ drain-source on-resistance at a nominal gate-source voltage of 4.5V. This surface-mount device, packaged in TO-263-3, boasts a maximum power dissipation of 312.5W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with typical turn-on delay of 15ns and fall time of 8ns. RoHS compliant and designed for general-purpose power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | 4.5V |
| Termination | SMD/SMT |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 4.18nF |
| Power Dissipation | 3.12W |
| Threshold Voltage | 4.5V |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 150V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 312.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 18mR |
| Drain to Source Breakdown Voltage | 150V |
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