SUM90N06-4M4P-E3
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Краткое описание:
60V 90A N-Channel Power MOSFET, 4.4mR Rds(on), TO-263
Дополнительная информация
N-channel power MOSFET, surface mountable in a TO-263-3 package. Features 60V drain-source breakdown voltage and a low 4.4mΩ drain-source on-resistance. Supports continuous drain current up to 90A with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with an 8ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.4mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 6.19nF |
| Power Dissipation | 3.75W |
| Turn-On Delay Time | 23ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4.4mR |
| Drain to Source Breakdown Voltage | 60V |
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