SUM90N08-4M8P-E3

Снят с производства
SUM90N08-4M8P-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 75V 90A 4.8mR D2PAK Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 75V drain-source breakdown voltage and 90A continuous drain current. Surface mount TO-263-3 package offers low 4.8mR drain-source on-resistance. Operates across a wide temperature range from -55°C to 175°C with 3.75W maximum power dissipation. Includes fast switching characteristics with 8ns fall time and 23ns turn-on delay.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 4.8mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 6.46nF
Power Dissipation 3.75W
Turn-On Delay Time 23ns
Radiation Hardening No
Turn-Off Delay Time 34ns
Max Power Dissipation 3.75W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 10.6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 75V
Drain-source On Resistance-Max 4.8MR
Drain to Source Breakdown Voltage 75V

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