SUP36N20-54P-E3
Снят с производства
Увеличить
Краткое описание:
200V 36A N-CH MOSFET TO-220 53mR RdsOn
Дополнительная информация
N-channel MOSFET with 200V drain-source voltage (Vdss) and 36A continuous drain current (ID). Features low 53mΩ drain-to-source resistance (Rds On Max) and a TO-220-3 through-hole package. Operates with a gate-source voltage (Vgs) up to 25V, exhibiting fast switching speeds with a 9ns fall time and 16ns turn-on delay. Offers a maximum power dissipation of 166W and a wide operating temperature range from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Nominal Vgs | 4.5V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.1nF |
| Threshold Voltage | 4.5V |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 166W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Voltage (Vdss) | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
