SUP40N10-30-E3
Снят с производства
Увеличить
Краткое описание:
N-CH MOSFET 100V 40A 30mR TO-220AB
Дополнительная информация
N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 40A continuous drain current. This through-hole component offers a low 30mΩ drain-source on-resistance and a maximum power dissipation of 107W. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching speeds with turn-on delay of 11ns and fall time of 12ns. Packaged in a TO-220-3 case, this RoHS compliant device is ideal for demanding power applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 30mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 3.75W |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 107W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 30mR |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
