SUP50N03-5M1P-GE3

Снят с производства
SUP50N03-5M1P-GE3 - Vishay(Siliconix)
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Краткое описание: 50A 30V N-CH MOSFET TO-220 Power Transistor
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET with 30V drain-source voltage and 50A continuous drain current. Features low 5.1mΩ Rds On, 1V threshold voltage, and fast switching times including 8ns turn-on delay and 9ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 59.5W. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component is suitable for general-purpose power applications.
RoHS Compliant
Mount Through Hole
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 9ns
Lead Free Lead Free
Packaging Bulk
Rds On Max 5.1mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.78nF
Threshold Voltage 1V
Number of Channels 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant No
Max Power Dissipation 59.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Drain to Source Voltage (Vdss) 30V

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