SUP75N03-04-E3

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SUP75N03-04-E3 - Vishay(Siliconix)
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Краткое описание: MOSFET N-CH 30V 75A 7mR TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET with 30V drain-source breakdown voltage and 75A continuous drain current. Features low 7mΩ drain-source resistance and 187W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, operating from -55°C to 175°C. Includes fast switching characteristics with a 20ns turn-on delay and 95ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 95ns
Packaging Rail/Tube
Rds On Max 4mR
Package/Case TO-220-3
Polarization N
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 10.742nF
Power Dissipation 187W
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 190ns
Max Power Dissipation 187W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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