SUP75P05-08-E3

Снят с производства
SUP75P05-08-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: P-CH MOSFET 55V 75A 8mR TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with 55V drain-source voltage and 75A continuous drain current. Features low 8mΩ Rds(on) and 250W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Through-hole mounting in a TO-220AB package. Includes fast switching times with turn-on delay of 13ns and fall time of 175ns.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 175ns
Packaging Rail/Tube
Rds On Max 8mR
Nominal Vgs -2V
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 8.5nF
Power Dissipation 250W
Threshold Voltage -2V
Number of Elements 1
Turn-On Delay Time 13ns
Turn-Off Delay Time 115ns
Reach SVHC Compliant Unknown
Max Power Dissipation 250W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Drain to Source Voltage (Vdss) -55V
Drain to Source Breakdown Voltage 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.