SUP85N02-03-E3
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Краткое описание:
N-CH MOSFET 20V 85A 3mR TO-220AB
Дополнительная информация
N-channel MOSFET featuring 20V drain-source breakdown voltage and 85A continuous drain current. This through-hole component offers a low 3mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 175°C, it includes a 20ns turn-on delay and 450ns turn-off delay. Packaged in TO-220AB, this RoHS compliant device is ideal for demanding applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 320ns |
| Packaging | Rail/Tube |
| Rds On Max | 3mR |
| Nominal Vgs | 450mV |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 21.25nF |
| Power Dissipation | 250W |
| Threshold Voltage | 450mV |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 450ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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