SUP90N03-03-E3

Снят с производства
SUP90N03-03-E3 - Vishay(Siliconix)
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Краткое описание: N-Channel MOSFET, 30V, 28.8A, 2.9mR, TO-220-3
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET with 30V drain-source voltage and 28.8A continuous drain current. Features low 2.9mΩ drain-source on-resistance and 250W maximum power dissipation. Packaged in a TO-220AB through-hole mount, this RoHS compliant component offers fast switching with a 12ns fall time. Operates from -55°C to 175°C, suitable for general-purpose power applications.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 2.9mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 12.065nF
Number of Channels 1
Turn-On Delay Time 55ns
Radiation Hardening No
Turn-Off Delay Time 55ns
Max Power Dissipation 250W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 28.8A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 2.9MR

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