SUP90N08-6M8P-E3

Снят с производства
SUP90N08-6M8P-E3 - Vishay(Siliconix)
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Краткое описание: 75V 90A N-CH MOSFET 6.8mR TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 75V drain-source breakdown voltage and 90A continuous drain current. Features low 6.8mR drain-source on-resistance and 4.62nF input capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.75W. Packaged in a TO-220-3 through-hole mount, this component is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Through Hole
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 6.8mR
Termination Through Hole
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 4.62nF
Power Dissipation 3.75W
Turn-On Delay Time 16ns
Dual Supply Voltage 75V
Radiation Hardening No
Turn-Off Delay Time 24ns
Reach SVHC Compliant Yes
Max Power Dissipation 3.75W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 6.8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 75V
Drain to Source Breakdown Voltage 75V

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