SUP90N10-8M8P-E3
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Краткое описание:
N-Channel Power MOSFET 100V 90A 8.8mR TO-220
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 90A continuous drain current. Offers a low 8.8mΩ maximum drain-source on-resistance. Designed for through-hole and surface mount applications with a TO-220-3 package. Operates across a wide temperature range from -55°C to 175°C. Includes a 2.5V threshold voltage and fast switching characteristics with 23ns turn-on and 34ns turn-off delay times. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.8mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 6.29nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 2.5V |
| Turn-On Delay Time | 23ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8.8mR |
| Drain to Source Breakdown Voltage | 100V |
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