Si2366DS-T1-GE3
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N-Channel MOSFET, 30V, 5.8A, SOT-23
Дополнительная информация
N-channel MOSFET transistor featuring a 30V drain-to-source voltage and 5.8A continuous drain current. Surface mountable in a 3-pin SOT-23 package, this component offers a low 30mΩ drain-to-source resistance. Key electrical characteristics include a 1.2V nominal gate-to-source voltage and 335pF input capacitance, with fast switching times including a 5ns turn-on delay. Rated for operation between -55°C and 150°C, it supports 2.1W maximum power dissipation and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Nominal Vgs | 1.2V |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 335pF |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 30V |
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