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Краткое описание:
N-CH MOSFET 30V 16.8A SOIC N 8-Pin
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 16.8A continuous drain current. This single element transistor offers a low 4.9mOhm drain-source resistance at 10V gate-source voltage. Housed in an 8-pin SOIC N (SOP) lead-frame SMT package with gull-wing leads, it supports surface mounting. Key specifications include a maximum power dissipation of 2500mW and an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012AA |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOIC N |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4(Max) |
| Package Description | Small Outline IC Narrow Body |
| Package Family Name | SOP |
| Package Height (mm) | 1.55(Max) |
| Package Length (mm) | 5(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 36nC |
| Typical Gate Charge @ Vgs | 36@10V|[email protected]nC |
| Typical Output Capacitance | 406pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2.4V |
| Maximum Drain Source Resistance | 4.9@10VmOhm |
| Typical Input Capacitance @ Vds | 2071@15VpF |
| Maximum Continuous Drain Current | 16.8A |
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