Si4186DY
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Краткое описание:
N-CH MOSFET 20V 35.8A 2.6mOhm SOIC N 8-Pin
Дополнительная информация
N-channel Power MOSFET featuring TrenchFET process technology. 20V drain-source voltage and 35.8A continuous drain current. Low 2.6mOhm drain-source resistance at 10V gate-source voltage. 8-pin SOIC N package with gull-wing leads for surface mounting. Single element configuration with enhancement mode channel.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012AA |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOIC N |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4(Max) |
| Process Technology | TrenchFET |
| Package Description | Small Outline IC Narrow Body |
| Package Family Name | SOP |
| Package Height (mm) | 1.55(Max) |
| Package Length (mm) | 5(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 60nC |
| Typical Gate Charge @ Vgs | 60@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | 2.6@10VmOhm |
| Typical Input Capacitance @ Vds | 3630@10VpF |
| Maximum Continuous Drain Current | 35.8A |
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