Si4890BDY-T1-E3

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Si4890BDY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 16A 12mR SO Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-CHANNEL MOSFET, 30V Vdss, 16A continuous drain current, and 12mR Rds On at 10V gate-source voltage. This surface mount component features a low threshold voltage of 2.6V and fast switching times with an 8ns fall time and 20ns turn-on/off delays. Operating across a -55°C to 150°C temperature range, it offers a maximum power dissipation of 2.5W and is packaged in a compact SO case.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 8ns
Packaging Tape and Reel
Rds On Max 12mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1.535nF
Threshold Voltage 2.6V
Number of Channels 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Reach SVHC Compliant Unknown
Max Power Dissipation 2.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 12mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 30V

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