Si5419DU
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Краткое описание:
P-CH MOSFET 30V 12A SMT PowerPAK ChipFET
Дополнительная информация
P-channel Power MOSFET, surface mount, 8-pin PowerPAK ChipFET package. Features 30V drain-source voltage, 12A continuous drain current, and 20mOhm maximum drain-source resistance at 10V. Offers typical gate charge of 30nC at 10V and input capacitance of 1400pF at 15V. Operates from -55°C to 150°C with a maximum power dissipation of 3100mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | PowerPAK ChipFET |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 1.9 |
| Package Family Name | Chip FET |
| Package Height (mm) | 0.8(Max) |
| Package Length (mm) | 3 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 30nC |
| Typical Gate Charge @ Vgs | 30@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 20@10VmOhm |
| Typical Input Capacitance @ Vds | 1400@15VpF |
| Maximum Continuous Drain Current | 12A |
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