Si7288DP
Краткое описание:
N-CH MOSFET 40V 20A Dual Drain PowerPAK SO SMT
Дополнительная информация
N-channel Power MOSFET, dual dual drain configuration, 40V drain-source voltage, 20A continuous drain current. Features 2.8V gate threshold voltage and 19mOhm maximum drain-source resistance at 10V. Surface mountable in an 8-pin PowerPAK SO package with no leads, measuring 4.9mm x 5.89mm x 1.07mm. Operating temperature range from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | PowerPAK SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.89 |
| Package Height (mm) | 1.07(Max) |
| Package Length (mm) | 4.9 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.04 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3600mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 10nC |
| Typical Gate Charge @ Vgs | [email protected]|10@10VnC |
| Typical Output Capacitance | 100pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Threshold Voltage | 2.8V |
| Maximum Drain Source Resistance | 19@10VmOhm |
| Typical Input Capacitance @ Vds | 565@20VpF |
| Maximum Continuous Drain Current | 20A |
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