SiA439EDJ-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET 20V 28A 16.5mR 19W Surface Mount
Дополнительная информация
The SiA439EDJ-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 19W and a continuous drain current of 28A. The device is packaged in a surface mount package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Packaging | Tape and Reel |
| Rds On Max | 16.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.41nF |
| Power Dissipation | 19W |
| Radiation Hardening | No |
| Turn-Off Delay Time | 95ns |
| Max Power Dissipation | 19W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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