SiA519EDJ
Увеличить
Краткое описание:
Dual N/P-CH Power MOSFET 20V 4.5A TrenchFET PowerPAK SC-70
Дополнительная информация
Dual N/P-channel enhancement mode power MOSFET in a 6-pin PowerPAK SC-70 surface mount package. Features 20V drain-source voltage, 4.5A continuous drain current, and low on-resistance of 40mOhm (N-channel) and 90mOhm (P-channel) at 4.5V Vgs. Utilizes TrenchFET process technology for efficient power management. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1900mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | PowerPAK SC-70 |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Width (mm) | 2.05 |
| Process Technology | TrenchFET |
| Package Family Name | SOT |
| Package Height (mm) | 0.75 |
| Package Length (mm) | 2.05 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 7.7|10.5nC |
| Typical Gate Charge @ Vgs | 7.7@10V|[email protected]@N Channel|10.5@10V|[email protected]@P ChannelnC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1.4@N Channel|1.3@P ChannelV |
| Maximum Drain Source Resistance | [email protected]@N Channel|[email protected]@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 350@10V@N Channel|340@10V@P ChannelpF |
| Maximum Continuous Drain Current | 4.5A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
