SiB441EDK-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET 12V 9A 13W Surface Mount
Дополнительная информация
The SiB441EDK-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a drain to source breakdown voltage of 12V and a continuous drain current of 9A. It features a maximum operating temperature range of -55°C to 150°C and is RoHS compliant. The device has a maximum power dissipation of 13W and is packaged in a surface mount configuration.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.18nF |
| Power Dissipation | 13W |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain to Source Breakdown Voltage | -12V |
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