SiE844DF-T1-GE3

Снят с производства
SiE844DF-T1-GE3 - Vishay
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Краткое описание: N-CH MOSFET 30V 44.5A TrenchFET PolarPAK 10-Pin SM
Производитель Vishay
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET featuring TrenchFET technology, designed for surface mount applications. This 10-pin PolarPAK package component offers a maximum drain-source voltage of 30V and a continuous drain current of 44.5A. It boasts a low drain-source on-resistance of 7mΩ at 10V, with typical gate charge values of 29nC at 10V and 13.1nC at 4.5V. The component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 5200mW.
PCB 10
ECCN EAR99
PPAP No
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 18612
Pin Count 10
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case PolarPAK
AEC Qualified No
Configuration Single Quad Drain Dual Gate Quad Source
RoHS Versions 2011/65/EU, 2015/863
Package Material Plastic
Package Width (mm) 5.16
Process Technology TrenchFET
Package Family Name PolarPAK
Package Height (mm) 0.8
Package Length (mm) 6.15
Radiation Hardening No
Max Operating Temperature 150°C
Maximum Power Dissipation 5200mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 29nC
Typical Gate Charge @ Vgs 29@10V|[email protected]nC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 3V
Maximum Drain Source Resistance 7@10VmOhm
Typical Input Capacitance @ Vds 2150@15VpF
Maximum Continuous Drain Current 44.5A

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