SiHB22N60E-E3

Производится
SiHB22N60E-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: N-CHANNEL MOSFET 600V 21A TO-263-3 Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SiHB22N60E-E3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 227W and a continuous drain current of 21A. The device is packaged in a TO-263-3 package and is lead free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 54ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 180mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 1.92nF
Number of Channels 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 66ns
Max Power Dissipation 227W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 180mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Drain to Source Voltage (Vdss) 600V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.