SiHF510S-E3
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Краткое описание:
N-CH MOSFET 100V 5.6A D2PAK TO-263 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET, 100V drain-source voltage, 5.6A continuous drain current. Features a D2PAK (TO-263AB) surface-mount package with gull-wing leads, 3 pins, and a tab for enhanced thermal performance. Maximum gate threshold voltage is 4V, with a maximum drain-source on-resistance of 540mΩ at 10V. Operating temperature range from -55°C to 175°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-263AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.65(Max) |
| Package Description | Double Deca Watt Package |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.83(Max) |
| Package Length (mm) | 10.41(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.83(Max) + 0.25 |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 3700mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8.3(Max)nC |
| Typical Gate Charge @ Vgs | 8.3(Max)@10VnC |
| Typical Output Capacitance | 81pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 540@10VmOhm |
| Typical Input Capacitance @ Vds | 180@25VpF |
| Maximum Continuous Drain Current | 5.6A |
