SiHF530-E3
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Краткое описание:
N-CH Power MOSFET 100V 14A TO-220AB Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. This single-element transistor is housed in a TO-220AB through-hole package with 3 pins and a tab, offering a maximum power dissipation of 88000mW. Key electrical characteristics include a ±20V gate-source voltage, 4V gate threshold voltage, and 160mΩ drain-source resistance at 10V. The component operates across a temperature range of -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.67(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.65(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.01(Max) |
| Package Length (mm) | 10.51(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.14(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 88000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 26(Max)nC |
| Typical Gate Charge @ Vgs | 26(Max)@10VnC |
| Typical Output Capacitance | 250pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 160@10VmOhm |
| Typical Input Capacitance @ Vds | 670@25VpF |
| Maximum Continuous Drain Current | 14A |
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