SiHF840LC-E3

Производится
SiHF840LC-E3 - Vishay
Краткое описание: N-CH 500V 8A Power MOSFET TO-220AB Through Hole
Производитель Vishay
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, 500V drain-source voltage, 8A continuous drain current, and 850mΩ maximum drain-source resistance at 10V. This through-hole component features a TO-220AB package with 3 pins and a tab, offering a maximum power dissipation of 125W. It operates within a temperature range of -55°C to 150°C and has a typical gate charge of 39nC at 10V.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-220AB
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code 18612
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220AB
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.67(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.7(Max)
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 9.01(Max)
Package Length (mm) 10.41(Max)
Radiation Hardening No
Seated Plane Height (mm) 19.14(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 125000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 39(Max)nC
Typical Gate Charge @ Vgs 39(Max)@10VnC
Maximum Gate Source Voltage ±30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 500V
Maximum Drain Source Resistance 850@10VmOhm
Typical Input Capacitance @ Vds 1100@25VpF
Maximum Continuous Drain Current 8A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.