SiHF840LCL-E3
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Краткое описание:
N-CH Power MOSFET 500V 8A TO-262
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. This single-element transistor is housed in a TO-262 package with through-hole mounting and a 3-pin configuration. Key specifications include a maximum drain-source on-resistance of 850 mOhm at 10V, typical gate charge of 39 nC at 10V, and typical input capacitance of 1100 pF at 25V. Maximum power dissipation is 3100 mW, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-262AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-262 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | I2PAK |
| Package Height (mm) | 9.65(Max) |
| Package Length (mm) | 10.67(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 39(Max)nC |
| Typical Gate Charge @ Vgs | 39(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Drain Source Resistance | 850@10VmOhm |
| Typical Input Capacitance @ Vds | 1100@25VpF |
| Maximum Continuous Drain Current | 8A |
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