SiHF9610-E3
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Краткое описание:
P-CH MOSFET 200V 1.8A TO-220AB Through Hole
Дополнительная информация
P-channel Power MOSFET featuring a 200V maximum drain-source voltage and 1.8A continuous drain current. This through-hole component is housed in a TO-220AB package with 3 pins and a tab, offering a maximum power dissipation of 20000mW. It operates within a temperature range of -55°C to 150°C and has a gate threshold voltage of 4V.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.67(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.7(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.01(Max) |
| Package Length (mm) | 10.41(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.14(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 11(Max)nC |
| Typical Gate Charge @ Vgs | 11(Max)@10VnC |
| Typical Output Capacitance | 50pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 3000@10VmOhm |
| Typical Input Capacitance @ Vds | 170@25VpF |
| Maximum Continuous Drain Current | 1.8A |
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