SiHFBF20L-E3
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Краткое описание:
N-CH Power MOSFET 900V 1.7A TO-262
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-262 package, featuring a 900V drain-source voltage and 1.7A continuous drain current. This single-element transistor offers a low on-resistance of 8000 mOhm at 10V, with a typical gate charge of 38 nC and input capacitance of 490 pF at 25V. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 3100 mW.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-262AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-262 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | I2PAK |
| Package Height (mm) | 9.65(Max) |
| Package Length (mm) | 10.67(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 38(Max)nC |
| Typical Gate Charge @ Vgs | 38(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Drain Source Resistance | 8000@10VmOhm |
| Typical Input Capacitance @ Vds | 490@25VpF |
| Maximum Continuous Drain Current | 1.7A |
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