SiHFPE50-E3

Производится
SiHFPE50-E3 - Vishay
Краткое описание: N-CH Power MOSFET 800V 7.8A TO-247AC Through Hole
Производитель Vishay
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 800V drain-source voltage and 7.8A continuous drain current. This through-hole mounted component is housed in a TO-247AC package with 3 pins and a tab. It offers a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate-source voltage of ±20V and a typical input capacitance of 3100pF at 25V.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-247AC
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code 18612
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-247AC
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 5.46
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 5.31(Max)
Package Description Transistor Outline Package
Package Family Name TO-247
Package Height (mm) 20.82(Max)
Package Length (mm) 15.87(Max)
Radiation Hardening No
Seated Plane Height (mm) 25.11(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 190000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 200(Max)nC
Typical Gate Charge @ Vgs 200(Max)@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 800V
Maximum Drain Source Resistance 1200@10VmOhm
Typical Input Capacitance @ Vds 3100@25VpF
Maximum Continuous Drain Current 7.8A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.