SiHFPG40-E3
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Краткое описание:
N-CH Power MOSFET 1000V 4.3A TO-247
Дополнительная информация
N-channel enhancement mode power MOSFET with a 1000V drain-source voltage and 4.3A continuous drain current. Features a 3-pin TO-247 through-hole package with a maximum power dissipation of 150W. Offers a low on-resistance of 3500mΩ at 10V gate-source voltage and a typical gate charge of 120nC at 10V. Operating temperature range is -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.31(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.7(Max) |
| Package Length (mm) | 15.87(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 120(Max)nC |
| Typical Gate Charge @ Vgs | 120(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Drain Source Resistance | 3500@10VmOhm |
| Typical Input Capacitance @ Vds | 1600@25VpF |
| Maximum Continuous Drain Current | 4.3A |
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