SiHFPS30N60K-E3
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Краткое описание:
600V 30A N-CH Power MOSFET, Super-247, Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 30A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 190mΩ at 10V. Housed in a 3-pin Super-247 package with through-hole mounting, it supports a maximum power dissipation of 450W and operates across a wide temperature range of -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-274AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | Super-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.45 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.3(Max) |
| Package Family Name | TO-274-AA |
| Package Height (mm) | 20.8(Max) |
| Package Length (mm) | 16.1(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 450000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 220(Max)nC |
| Typical Gate Charge @ Vgs | 220(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Input Capacitance @ Vds | 5870@25VpF |
| Maximum Continuous Drain Current | 30A |
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