SiHFR430A-E3
Производится
Краткое описание:
N-CH Power MOSFET 500V 5A DPAK TO-252 3-Pin SM
Дополнительная информация
Surface mount N-channel enhancement mode power MOSFET in a TO-252 DPAK package. Features a 500V drain-source voltage, 5A continuous drain current, and 1700mOhm drain-source resistance at 10V. This single element transistor offers a maximum power dissipation of 110W and operates across a temperature range of -55°C to 150°C. The DPAK package has a 3-pin configuration with a tab, measuring 6.73mm(Max) length, 6.22mm(Max) width, and 2.38mm(Max) height.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Package Weight (g) | 0.3 |
| Package Width (mm) | 6.22(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.38(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.52(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 24(Max)nC |
| Typical Gate Charge @ Vgs | 24(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 1700@10VmOhm |
| Typical Input Capacitance @ Vds | 750@1VpF |
| Maximum Continuous Drain Current | 5A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
