SiHFU110-E3
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Краткое описание:
100V 4.3A N-CH Power MOSFET TO-251 IPAK
Дополнительная информация
N-channel Power MOSFET, single configuration, featuring 100V drain-source voltage and 4.3A continuous drain current. This enhancement mode transistor offers a low 540mOhm maximum drain-source resistance at 10V. Packaged in a TO-251AA (IPAK) through-hole plastic housing with 3 pins and a tab, it supports a maximum power dissipation of 25000mW and operates from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-251AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | IPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 2.39(Max) |
| Package Family Name | TO-251 |
| Package Height (mm) | 6.22(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 7.49(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8.3(Max)nC |
| Typical Gate Charge @ Vgs | 8.3(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 540@10VmOhm |
| Typical Input Capacitance @ Vds | 180@25VpF |
| Maximum Continuous Drain Current | 4.3A |
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