SiHFU9024
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Краткое описание:
P-CH MOSFET 60V 8.8A TO-251AA Through Hole
Дополнительная информация
P-channel Power MOSFET with 60V drain-source voltage and 8.8A continuous drain current. Features a TO-251AA package with through-hole mounting and a 3-pin configuration. Offers a maximum gate-source voltage of ±20V and a low drain-source on-resistance of 280mOhm at 10V. Designed for enhancement mode operation with a maximum power dissipation of 2500mW and an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TO-251AA |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Package Width (mm) | 2.39(Max) |
| Package Family Name | TO-251 |
| Package Height (mm) | 6.22(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 9.78(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 19(Max)nC |
| Typical Gate Charge @ Vgs | 19(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 280@10VmOhm |
| Typical Input Capacitance @ Vds | 570@25VpF |
| Maximum Continuous Drain Current | 8.8A |
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