SiHFU9110-E3
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Краткое описание:
P-CH Power MOSFET 100V 3.1A TO-251AA Through Hole
Дополнительная информация
P-channel Power MOSFET featuring 100V drain-source voltage and 3.1A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a TO-251AA package with 3 pins and a tab, suitable for through-hole mounting. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 1200 mOhm at 10V, and a maximum power dissipation of 2500 mW. Operating temperature range spans from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TO-251AA |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8.7(Max)nC |
| Typical Gate Charge @ Vgs | 8.7(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Input Capacitance @ Vds | 200@25VpF |
| Maximum Continuous Drain Current | 3.1A |
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