SiHG47N60EF
Увеличить
Краткое описание:
600 V N-Channel Power MOSFET with Fast Body Diode
Дополнительная информация
This device is an N-channel power MOSFET in a TO-247AC package for high-voltage switching applications. It is rated for 600 V drain-source voltage, 47 A continuous drain current at 25 °C case temperature, and 379 W maximum power dissipation. Vishay specifies a maximum drain-source on-resistance of 0.065 Ω at VGS = 10 V and a maximum total gate charge of 228 nC. The fast body diode design reduces reverse recovery parameters and supports demanding power conversion topologies. Operating junction and storage temperature range is -55 °C to +150 °C, and the GE3 orderable version is RoHS-compliant, lead-free at the termination, and halogen-free.
| Green | No |
| Halogen-free | Yes |
| Configuration | Single N-Channel MOSFET |
| Qualification | Non-Automotive |
| Lead (pb)-free | Termination is Lead Free |
| Rohs-compliant | Yes |
| Msl Designation | Floor Life-Unlimited |
| Avalanche Energy | 1500mJ |
| Gate-Drain Charge | 62nC |
| Input Capacitance | 5000pF |
| Gate-Source Charge | 32nC |
| Drain-Source Voltage | 600V |
| Pulsed Drain Current | 138A |
| Total Gate Charge Max | 228nC |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Maximum Power Dissipation | 379W |
| Drain-Source On-Resistance Max | 0.065Ω |
| Device Termination Plating Finish | Sn |
| Body Diode Reverse Recovery Time Typ | 199ns |
| Body Diode Reverse Recovery Charge Typ | 1.4μC |
| Continuous Drain Current @ 25 °C Case | 47A |
| Continuous Drain Current @ 100 °C Case | 29A |
| Junction-to-Case Thermal Resistance Max | 0.33°C/W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
